Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: sic@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition
Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition
Epitaxial layers on a 150-mm-diameter silicon carbide wafer have been grown using a horizontal hot-wall chemical vapor deposition system for three 150-mm-diameter wafers. We investigated the surface morphology and surface defects such as shallow pits and triangular defects of the grown epitaxial layers, as well as the thickness and carrier concentration uniformities. The shallow pit and triangular defect densities were 4.6 cm−2 and 1.6 cm−2, respectively, and the thickness and the carrier concentration uniformities were 3.9% and 47%, respectively. We focused on improving the carrier concentration distribution for practical use and concluded that the cause of the distribution was the distribution in the effective C/Si ratio in the direction of the gas flow.
Highlights
•SiC epitaxial layers on a 150-mm-diameter wafer have been grown.
•The shallow pit and triangular defect densities were 4.6 cm−2 and 1.6 cm−2, respectively.
•The thickness and carrier concentration uniformities were 3.9% and 47%, respectively.
 
 
Fig. 1. Dependence of the (a) shallow pit and (b) triangular defect densities on the C/Si ratio.
 
Fig. 2. Distribution of the (a) shallow pits and (b) triangular defects of the 150-mm-diameter epitaxial layer.
 

If you need more information about Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition, please visit:http://www.semiconductorwafers.net/ or send us email at sic@powerwaywafer.com