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Home > News > Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates
Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates
A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated photodetectors on annealed substrates showed enhanced sensitivity and responsivity to ultraviolet radiation.
► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate.
► Thermal annealing was followed to enhance the physical properties of samples.
► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples.
► The effect of annealing temperature on electrical performance of devices was studied.
► The efficiency of photodetectors was enhanced by annealing at elevated temperatures.
Cross-sectional view of field-emission SEM (FESEM) images of (a) TC-PS and sputtered SiC samples on the TC-PS substrate at different annealing temperatures: (b) 800, (c) 1000 and (d) 1200 °C. The inset of each image shows the planar 2-dimensional SEM micrograph of related sample.
Source: Journal of Alloys and Compounds
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