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Home > News > Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas‐source molecular beam epitaxy
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas‐source molecular beam epitaxy
Silicon carbide thin films have been grown on vicinal 6HSiC(0001) substrates by gassource molecular beam epitaxy at 1050°C. The effect of gas flow ratios (C2H4Si2H6=1,2,10) on the growth mode was examined via crosssectional high resolution transmission electron microscopy and in situ reflection high energy electron diffraction. Step flow, step bunching, and the deposition of 6HSiC occurred at the outset of the exposure of the (1×1) surface to the reactants using any flow ratio. Subsequent deposition resulted in step flow and continued growth of 6H films or formation and coalescence of 3CSiC islands using the gas flow ratio of one of the ethylenerich ratios, respectively. The (3×3) surface reconstruction observed using the former ratio is believed to enhance the diffusion lengths of the adatoms which, in turn, promotes step flow growth.
 
Source:IEEE
 
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