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Home > News > Chemically vapor-deposited silicon carbide films for surface protection
Chemically vapor-deposited silicon carbide films for surface protection
Silicon carbide (SiC) films offer excellent chemical and mechanical properties and are, therefore, well suited for protection against corrosion and abrasion. SiC films in the thickness range from 10 nm to 500 nm were chemically vapor-deposited in a hot-wall, low-pressure reactor at temperatures between 800 °C and 900 °C. As a single precursor, hexamethylendisilacan was used. Film thickness growth is a linear function of process time. The deposition rate versus time exhibits an Arrhenius behaviour with an activation energy of 3.2 eV. The films reveal a good resistance to etching with HF and HF/HNO3 solution.
 
Source: Surface and Coatings Technology
 
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