Company Name: XIAMEN POWERWAY ADVANCED MATERIAL
Tel: +86-592-5601404
Fax: +86-592-5563272
E-Mail: sic@powerwaywafer.com

Address: #506B, Henghui Business Center,No.77,Lingxia Nan Road, High Technology Zone, Huli, Xiamen,361006
Home > News > Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices
Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices

MOS capacitors were produced on n-type 4H-SiC using oxidized polycrystalline silicon (polyoxide). The polyoxide samples grown by dry oxidation without an anneal had a high interface state density (Dit) of 1.8 × 1012 cm−2 eV−1 and the polyoxide samples grown by wet oxidation had a lower Dit of 1.2 × 1012 cm−2 eV−1 (both at 0.5 eV below the conduction band). After 1 h Ar annealing, the Dit of wet polyoxide was reduced significantly to 2.6 × 1011 cm−2 eV−1 (at 0.5 eV below the conduction band). Dry polyoxide exhibits higher breakdown 

Keywords

  • 4H-SiC
  • Polyoxide
  • MOS
  • Interface states
  • Breakdown

Source:Sciencedirect

 

If you need more information about  SiC Epitaxial Wafer, please visit:http://www.semiconductorwafers.net or send us email at sic@powerwaywafer.com