Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: sic@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > A study of near-infrared nanosecond laser ablation of silicon carbide
A study of near-infrared nanosecond laser ablation of silicon carbide
This work presents a fundamental study about ablation threshold, absorption coefficient and absorption mechanism of silicon carbide (SiC) in the laser drilling process. Experimental study has been performed on single infrared (1064 nm) ns pulse laser ablation of SiC at various fluence values. Hole diameters were measured to predict the absorption threshold. Based on the ablation threshold, an average absorption coefficient of SiC at infrared wavelength during the laser ablation process is calculated. The result is discussed based on absorption coefficient dependence on doping concentration and temperature in semiconductor. A preliminary model is proposed that accounts for the heat conduction and surface evaporation to predict the cross-sectional shape of drilling hole. Analytical modeling results are in good agreement with observed features produced from the laser. The paper will conclude with suggestions for further research and potential applications for the work.
Source: International Journal of Heat and Mass Transfer
If you need more information about A study of near-infrared nanosecond laser ablation of silicon carbide, please visit:http://www.semiconductorwafers.net/ or send us email at sic@powerwaywafer.com