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Home > News > Spectrophotometry of ion implanted silicon carbide thin films
Spectrophotometry of ion implanted silicon carbide thin films
The optical properties of thin films of silicon carbide prepared by the implantation of C2H2+ ions into silicon evaporated onto a sapphire substrate and subsequently annealed at three different temperatures, 500, 600 and 800°C have been studied using spectrophotometry. The real and imaginary parts of the dielectric constant show systematic variations which can be attributed to the degree of amorphisation which is in turn related to the annealing temperature.
 
Source: sciencedirect
 
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