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Home > News > Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC
Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC

Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on silicon carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer-size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. The spread in properties among devices patterned on the same SiC/G wafer can thus be understood by considering the inhomogeneous number of layers often grown on the surface of epitaxial graphene on SiC.

 

Source:Sciencedirect

 

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