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Synthesis of silicon carbide in a nitrogen plasma torch: rotational temperature determination and material analysis

JAN 25,2018

Experiments on silicon carbide synthesis were performed using a dc nitrogen plasma torch. Measurements of rotational temperature of nitrogen molecules by emission spectroscopy were performed, based on the band (0, 1) of the first negative system of nitrogen {\rm N}_2^+ (B\,{}^2\Sigma_{\rm u}^+ \to X\,{}^2\Sigma _{\rm g}^+)  for the R branch. Three different plasma torch powers were studied in order to optimize the production of silicon carbide with our experimental set-up. The synthesized products were characterized by x-ray diffraction, scanning electron microscopy and energy dispersive x-ray spectroscopy.

 

  

 soource:Iopscience

 

 

 

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