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Home > News > Wafer bending/orientation characterization and their effects on fluid lubrication during chemical mechanical polishing
Wafer bending/orientation characterization and their effects on fluid lubrication during chemical mechanical polishing

 

Highlights

 

Distance sensors are used to monitor wafer status during 12-inch CMP.

Wafer has about 10 μm slight convex bending during CMP.

Wafer leading edge is lifted up and generates positive pitch angle.

Wafer orientation and fluid pressure have the same trend with rotational speed.

The convergent-dominated wedged gap causes the positive dominated-fluid pressure.

 


 

A novel in-situ wafer bending/orientation measurement system, cooperated with our previous developed fluid pressure mapping system, was developed for 12-inch chemical mechanical polishing (CMP) equipment. Wafer bending and wafer orientation are studied for copper wafer sliding against the IC1000 pad. The results reveal a micron level wafer bending, and a slight wafer pitch angle of 10−5 degree. Both the wafer pitch angle and interfacial fluid pressure increase with the speed till a critical speed and then decrease. The convergent-dominated wedged gap caused by the convexly bended, trailing edge pitched wafer gives a reasonable explanation to the positive-dominated fluid pressure.

Keywords

  • Polish wafer,Chemical mechanical polishing
  • Hydrodynamic lubrication
  • Wafer bending
  • Wafer orientation

Source:Sciencedirect

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