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Home > News > The channeling effect of Al and N ion implantation in 4H SiC during JFET integrated device processing
The channeling effect of Al and N ion implantation in 4H SiC during JFET integrated device processing

A strong channeling effect is observed for the ions of Al and N implanted in 4H–SiC due to its crystalline structure. This effect causes difficulties in subsequent accurate estimation of the depth of junctions formed by multiple ion implantation steps. A variety of lateral JFET transistors integrated on the same 4H–SiC wafer have been fabricated. Secondary Ion Mass Spectrometry measurements and Monte-Carlo simulations were performed in order to quantify and control the channeling effect of the implanted ions. A technological process was established enabling to obtain devices working with the presence of the channeling effect.

Keywords

  • 4H–SiC
  • Lateral JFET
  • Ion implantation
  • Channeling effect
  • SIMS

Source:Sciencedirect

 

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