The EI4 EPR centre in 6H SiC
We present the results of our recent electron paramagnetic resonance (EPR) studies of the EI4 EPR centre in electron-irradiated high-purity semi-insulating 6H SiC. Higher signal intensities and better resolution compared with previous studies have enabled a more detailed study of the hyperfine (hf) structure. Based on the observed hf structure due to the interaction with Si and C neighbours, the effective spin S=1 , the C1h -symmetry and the annealing behaviour, we suggest a carbon vacancy–carbon antisite complex in the neutral charge state, VCVCCSi0 , with the vacancies and the antisite in the basal plane, as a new defect model for the centre.
Source: iopscience