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Home > News > Surface processing of silicon carbide substrates
Surface processing of silicon carbide substrates
A method for the synthesis of millimeter-scaled graphene films on silicon carbide substrates at low temperatures (750 °C) is presented herein. Ni thin films were coated on a silicon carbide substrate and used to extract the substrate’s carbon atoms under rapid heating. During the cooling stage, the carbon atoms precipitated on the free surface of the Ni and formed single-layer or few-layer graphene. The result shows that the number of graphene layers might be further controlled by appropriate process conditions. In contrast to the epitaxial graphene synthesis on single crystal silicon carbide, the graphene prepared here are continuous over the entire Ni-coated area, and can be stripped from the substrate much more easily for further characterization. The large-scaled, low temperature and transferable features of our method suggest the potential for future graphene-based applications.
Fig. 1. (a) A typical SEM image of a non-patterned sample surface. (b) The corresponding Raman spectra recorded from red-squared area (position A and B) in (a). The insets are the zoom-in SEM images of red-squared area in (a) and the corresponding Raman mapping image with intensity ratio of I2D/IG ⩾ 1. (c) The typical TEM image of graphene flake. (d) The SADP from (c), which confirms the crystalline nature of the graphene flake. (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of this article.)
Source: Carbon
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