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Home > News > Silicon Carbide Thin Film Deposited at Low Temperature by DC Magnetron Sputtering and Its Field Emission Property
Silicon Carbide Thin Film Deposited at Low Temperature by DC Magnetron Sputtering and Its Field Emission Property
The SiC thin Alms were successfully fabricated on P-type <100> oriented silicon substrates at comparatively low temperature via DC magnetron sputtering deposition using a sintered SiC target with DC power of 120 W. The deposition argon pressure was constantly at 2.0 Pa. The as-grown SiC filmswere characterized by using X-ray diffraction, atomic force microscope (AFM) and profilometer. The low turn-on field of about 4.5 V/mum obtained from the field-emission property measurement at an anode-sample separation of 200 mum shows that SiC films are competitive candidates for field-emission-based vacuum microelectronic devices.
 
Source:IEEE
 
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