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Home > Knowledge > 5.Silicon Carbide Technology > 5.4 SiC Semiconductor Crystal Growth
5.4 SiC Semiconductor Crystal Growth

 

5.4 SiC Semiconductor Crystal Growth
 
As of this writing, much of the outstanding theoretical promise of SiC electronics highlighted in the
previous section has largely gone unrealized. A brief historical examination quickly shows that serious
shortcomings in SiC semiconductor material manufacturability and quality have greatly hindered the
development of SiC semiconductor electronics. From a simple-minded point of view, SiC electronics
development has very much followed the general rule of thumb that a solid-state electronic device can
only be as good as the semiconductor material from which it is made.