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SiC Epitaxial Wafer

Model NO.:intanetcms000053
SiC Epitaxial Wafer

SiC(Silicon Carbide) Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar
 Application of SiC epitaxial wafer
 Power factor correction(PFC)
PV inverter and UPS(Uninterrupted power supplies) inverters
Motor drives
Output rectification
Hybrid or electric vehicles
Epitaixal Wafer:
An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth (called epitaxy) for use in making semiconductor and photonic devices such as light-emitting diodes (LEDs). Several methods of growing the epitaxial layer on existing silicon or other wafers are currently used: metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), LPE, HVPE.
It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material. The lattice structure and orientation or lattice symmetry of the thin film material is identical to that of the substrate on which it is deposited. Most importantly, if the substrate is a single crystal, then the thin film will also be a single crystal. Contrast with self-assembled monolayer and mesotaxy.
 Homoepitaxy is a kind of epitaxy performed with only one material. In homoepitaxy, a crystalline film is grown on a substrate or film of the same material. This technology is used to grow a film which is more pure than the substrate and to fabricate layers having different doping levels. In academic literature, homoepitaxy is often abbreviated to "homoepi".Such as LT-GaAs wafer(GaAs/GaAs).
Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which crystals cannot otherwise be obtained and to fabricate integrated crystalline layers of different materials. Examples include Gallium nitride on sapphire, aluminium gallium indium phosphide (AlGaInP) on gallium arsenide (GaAs) or diamond or iridium.
Heterotopotaxy is a process similar to heteroepitaxy except for the fact that thin film growth is not limited to two dimensional growth. Here the substrate is similar only in structure to the thin film material.