Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: sic@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > Knowledge > 5.Silicon Carbide Technology > 5.5.6 SiC Device Packaging and System Considerations
5.5.6 SiC Device Packaging and System Considerations

 5.5 SiC Device Fundamentals

 
5.5.6 SiC Device Packaging and System Considerations
 
Hostile-environment SiC semiconductor devices and ICs are of little advantage if they cannot be reliably packaged and connected to form a complete system capable of hostile-environment operation. With proper material selection, modifications of existing IC packaging technologies appear feasible for nonpower SiC circuit packaging up to 300°C . Recent work is beginning to address the needs of the most demanding aerospace electronic applications, whose requirements include operation in highvibration 500–600°C oxidizing-ambient environments, sometimes with very high power . For example, some prototype electronic packages and circuit boards that can withstand over a thousand hours at 500°C have been demonstrated. Harsh-environment passive components such as inductors, capacitors, and transformers, must also be developed for operation in demanding conditions before the full system-level benefits of SiC electronics discussed in Section 5.3 can be successfully realized.