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Home > News > Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals
Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals

 Highlights

N doped SiC were irradiated with 150 MeV Ag12+ (1 × 1012 to 5 × 1013 ions/cm2).

Local disorder are analyzed by studying the LO Raman mode of the irradiated sample.

The TRPL studies provided evidence of the formation of radiative centers at 80 K.                                                                                                                                                                                          


In this report, the effect of disorder accumulation in Swift Heavy Ion (SHI) irradiated 6H-SiC is distinguished with respect to the irradiation temperature, viz., 80 K and 300 K. The samples were irradiated with 150 MeV Ag12+ ions with different fluences ranging from 1 × 1012 to 5 × 1013 ions/cm2. The structural and optical properties of N-doped 6H-SiC in its pristine condition and after SHI irradiation have been studied. The changes observed by Raman spectroscopy and Time resolved photoluminescence (TRPL) spectroscopy were ascribed to the disorder accumulation in 6H-SiC. The local disorder has been analyzed by studying the LO Raman mode of the irradiated sample in comparison to the pristine sample. The TRPL studies have provided evidence of the formation of radiative centers after irradiation at 80 K.

Keywords

  • 6H-SiC
  • SHI irradiation
  • Radiation damage
  • Raman scattering
  • Time resolved photoluminescence

 

Source:Sciencedirect 

 

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