Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: sic@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases
Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases
A polycrystalline silicon carbide film is formed on a silicon surface by chemical vapor deposition using monomethylsilane gas along with hydrogen chloride gas in ambient hydrogen at atmospheric pressure. The film deposition is performed near 1000 K, at which temperature the monomethylsilane maintains a chemical bond between the silicon and carbon present in the molecular structure. The excess amount of silicon on the film surface is reduced using the hydrogen chloride gas. Although the film deposition stops within 1 min after beginning the supply of the monomethylsilane gas and hydrogen chloride gas, annealing at 1273 K in ambient hydrogen after the film deposition allows further deposition so that a thick silicon carbide film can be obtained.
 
Fig. 1. Horizontal cold-wall chemical vapor deposition reactor used for silicon carbide film deposition.
 
Source: Journal of Crystal Growth
 
If you need more information about Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases, please visit:http://www.semiconductorwafers.net/ or send us email at sic@powerwaywafer.com.