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Home > News > On the nature and removal of saw marks on diamond wire sawn multicrystalline silicon wafers
On the nature and removal of saw marks on diamond wire sawn multicrystalline silicon wafers

Clearly visible saw marks are a significant barrier to commercial use of diamond wire sawn multicrystalline silicon wafers for solar cells. Two types of saw marks on the diamond-cut multicrystalline silicon wafers are identified—the millimeter scale round-run fringes caused by round-running of the saw wires, and the micron scale scratchescaused by scribing of the diamond tips. The latter consists of smooth and shiny grooves covered by a thin layer of amorphous phase. The micro-roughness of diamond-cut wafers is actually ~25% less than that of the conventional slurry-cut wafers. The reason for the visibility of the round-run fringes to naked eyes, and for the relatively rough appearance of diamond-cut wafers, is the visual enhancement from the shiny scratches. Therefore, the key to remove the round-run fringes is to roughen the smooth grooves, as flattening the very slightly sloped fringe zones is very difficult due to lack of chemical contrast over them. Acid-etching texturization cannot remove the saw marks on the diamond-cut silicon wafers. Alkaline-etching can only remove the saw marks on grains near (0 0 1) orientation. A vapor blast etching method has been attempted. The preliminary result is encouraging—complete removal of the saw marks has been achieved, along with a good surface texture, which reduces the light reflectivity to 19%.

Keywords

  • Diamond wire saw
  • Multicrystalline silicon
  • Saw marks
  • Texturization

Source:Sciencedirect


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