- Ti/4H-SiC Schottky diode breakdown voltage with different thickness of 4H-SiC epitaxial layer
- Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates
- Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates
- ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light
- Optical limiting effects in nanostructured silicon carbide thin films
- The EI4 EPR centre in 6H SiC
- Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging
- Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers
- Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate
- Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal