- Spectral broadening induced by intense ultra-short pulse in 4H SiC crystals
- Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Selective Embedded Growth of 4H–SiC Trenches in 4H SiC(0001) Substrates Using Carbon Mask
- Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC(0001) unipolar devices
- Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
- Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate
- Characterization of 3C-SiC Epitaxial Layers on TiC(111) by Raman Scattering
- Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates
- High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer