- Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate
- Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal
- Observation of intermediate template directed SiC nanowire growth in SIC N systems
- High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates
- Epitaxial graphene on SiC-from carrier density engineering to quasi-free standing graphene by atomic intercalation
- Epitaxial few-layer graphene-towards single crystal growth
- Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region
- Implanted bottom gate for epitaxial graphene on silicon carbide
- Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC
- Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates