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  • Optical Constants of Silicon Carbide for Astrophysical Applications. II. Extending Optical Functions from Infrared to Ultraviolet Using Single-Crystal Absorption Spectra
  • High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy
  • GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation
  • (Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate
  • Review of SiC crystal growth technology
  • The Electrochemical Society Heteroepitaxial Growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) Substrates
  • Investigation of Low Off-Angled 4H-SiC Epitaxial Wafers for Power Device Applications
  • Characteristics of 4H-SiC RF MOSFETs on a Semi-Insualting Substrate
  • A simple method for the enhancement of Jc in MgB2 thick films with an amorphous SiC impurity layer
  • A Thermodynamic Mechanism for PVT Growth Phenomena of SiC Single Crystals
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