- Review of SiC crystal growth technology
- The Electrochemical Society Heteroepitaxial Growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) Substrates
- Investigation of Low Off-Angled 4H-SiC Epitaxial Wafers for Power Device Applications
- Characteristics of 4H-SiC RF MOSFETs on a Semi-Insualting Substrate
- A simple method for the enhancement of Jc in MgB2 thick films with an amorphous SiC impurity layer
- A Thermodynamic Mechanism for PVT Growth Phenomena of SiC Single Crystals
- Homoepitaxial Growth of Semi-Insulating 4H-SiC by Metal-Organic Precursors
- Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3
- Electrical Properties of 3C-SiC Layers Grown on Silicon Substrates with a Novel Stress Relaxation Structure
- Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices