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  • Seoul Semiconductor Introduces World’s Smallest 24W DC LED Drivers at LIGHTFAIR International 2017
  • Scientists develop new technique for polishing surfaces at the nanoscale
  • Fully implanted vertical p–i–n diodes using high-purity semi-insulating 4H–SiC wafers
  • Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics
  • Plessey, Anvil Semiconductors and University of Cambridge Aim to Overcome the Green Gap with GaN on 3C-SiC/Si LEDs
  • Scientists announce the quest for high-index materials
  • Infineon Starts Volume Production of First Full-SiC-Module
  • Cree Offers 4H Silicon Carbide Epitaxial Wafers Featuring Very Low Basal Plane Dislocation
  • Fundamental Summary of LED SiC Substrate
  • Analysis of the interdigitated back contact solar cells: The n-type substrate lifetime and wafer thickness*
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