- Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC
- Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy
- Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
- Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices
- Analysis of heat dissipation of epitaxial graphene devices on SiC
- Nanogrinding of SiC wafers with high flatness and low subsurface damage
- Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions
- Precision treatment of silicon wafer edge utilizing ultrasonically assisted polishing technique
- Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode
- Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes