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  • Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
  • Graphene on silicon carbide: a versatile material system for integrated photonics and energy storage.
  • Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers
  • A review on single photon sources in silicon carbide
  • Silicon carbide wafer bonding by modified surface activated bonding method
  • Atomic scale study of the chemistry of oxygen, hydrogen and water at SiC surfaces
  • Processing of Presolar Grains around Post-Asymptotic Giant Branch Stars: Silicon Carbide as the Carrier of the 21 Micron Feature
  • Semiconducting graphene: Fabrication on patterned silicon carbide produces bandgap to advance graphene electronics
  • Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching
  • Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits
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