- Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam
- Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide
- Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n type 4H SiC
- Study of deep level defects in doped and semi insulating n 6H SiC epilayers grown by sublimation method
- Nitrogen doped epitaxial graphene on 4H SiC(0001) Experimental and theoretical study
- Hole injection and dielectric breakdown in 6H SiC and 4H SiC metal oxide semiconductor structures during substrate electron injection via Fowler Nordheim tunneling
- The channeling effect of Al and N ion implantation in 4H SiC during JFET integrated device processing
- Deformation and removal characteristics in nanoscratching of 6H SiC with Berkovich indenter
- The use of potassium peroxidisulphate and Oxone as oxidizers for the chemical mechanical polishing of silicon wafers
- Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum