- Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
- Graphene on silicon carbide: a versatile material system for integrated photonics and energy storage.
- Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers
- A review on single photon sources in silicon carbide
- Silicon carbide wafer bonding by modified surface activated bonding method
- Atomic scale study of the chemistry of oxygen, hydrogen and water at SiC surfaces
- Processing of Presolar Grains around Post-Asymptotic Giant Branch Stars: Silicon Carbide as the Carrier of the 21 Micron Feature
- Semiconducting graphene: Fabrication on patterned silicon carbide produces bandgap to advance graphene electronics
- Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching
- Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits