- Implanted bottom gate for epitaxial graphene on silicon carbide
- Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC
- Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates
- Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers
- Structural defects in SiC ingots investigated by synchrotron diffraction imaging
- Piezoresistance consideration on n-type 6H SiC for MEMS-based piezoresistance sensors
- Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
- Graphene on silicon carbide: a versatile material system for integrated photonics and energy storage.
- Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers
- A review on single photon sources in silicon carbide