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  • Silicon Carbide Substrate...
    • 6H Silicon Carbide
    • 4H Silicon Carbide
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    • Semi-insulating Silicon Carbide
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  • High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates
  • Epitaxial graphene on SiC-from carrier density engineering to quasi-free standing graphene by atomic intercalation
  • Epitaxial few-layer graphene-towards single crystal growth
  • Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region
  • Implanted bottom gate for epitaxial graphene on silicon carbide
  • Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC
  • Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates
  • Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers
  • Structural defects in SiC ingots investigated by synchrotron diffraction imaging
  • Piezoresistance consideration on n-type 6H SiC for MEMS-based piezoresistance sensors
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