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  • Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates
  • Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates
  • ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light
  • Optical limiting effects in nanostructured silicon carbide thin films
  • The EI4 EPR centre in 6H SiC
  • Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging
  • Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers
  • Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate
  • Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal
  • Observation of intermediate template directed SiC nanowire growth in SIC N systems
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