- The EI4 EPR centre in 6H SiC
- Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging
- Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers
- Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate
- Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal
- Observation of intermediate template directed SiC nanowire growth in SIC N systems
- High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates
- Epitaxial graphene on SiC-from carrier density engineering to quasi-free standing graphene by atomic intercalation
- Epitaxial few-layer graphene-towards single crystal growth
- Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region