- Low-thermal surface preparation, HCl etch and Si/SiGe selective epitaxy on (1 1 0) silicon surfaces
- Analysis of intensity dependent near bandedge absorption in semi insulating 4H SiC for photoconductive switch applications
- Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide
- Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC
- Reduction of background carrier concentration and lifetime improvement for 4H-SiC C-face epitaxial growth
- Ti/4H-SiC Schottky diode breakdown voltage with different thickness of 4H-SiC epitaxial layer
- Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates
- Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates
- ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light
- Optical limiting effects in nanostructured silicon carbide thin films