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  • Characterization of 3C-SiC Epitaxial Layers on TiC(111) by Raman Scattering
  • Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates
  • High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer
  • Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface
  • Low-thermal surface preparation, HCl etch and Si/SiGe selective epitaxy on (1 1 0) silicon surfaces
  • Analysis of intensity dependent near bandedge absorption in semi insulating 4H SiC for photoconductive switch applications
  • Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide
  • Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC
  • Reduction of background carrier concentration and lifetime improvement for 4H-SiC C-face epitaxial growth
  • Ti/4H-SiC Schottky diode breakdown voltage with different thickness of 4H-SiC epitaxial layer
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