- Characterization of silicon ingots: Mono-like versus high-performance multicrystalline
- Silicon carbide particles induced thermoelectric enhancement in SnSeS crystal
- Characterization of femtosecond-laser-induced periodic structures on SiC substrates
- Spectral broadening induced by intense ultra-short pulse in 4H SiC crystals
- Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Selective Embedded Growth of 4H–SiC Trenches in 4H SiC(0001) Substrates Using Carbon Mask
- Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC(0001) unipolar devices
- Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
- Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate