- Homoepitaxial Growth of Semi-Insulating 4H-SiC by Metal-Organic Precursors
- Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3
- Electrical Properties of 3C-SiC Layers Grown on Silicon Substrates with a Novel Stress Relaxation Structure
- Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices
- The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique
- Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate
- Defect formation in 4H-SiC single crystal grown on the prismatic seeds
- XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting
- Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers
- Structure and optical properties of the SiC/ZnO five-layer multi-layer on Si (111) substrate with a SiC buffer layer