- Analysis of heat dissipation of epitaxial graphene devices on SiC
- Nanogrinding of SiC wafers with high flatness and low subsurface damage
- Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions
- Precision treatment of silicon wafer edge utilizing ultrasonically assisted polishing technique
- Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode
- Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes
- Growth of SiC epitaxial layers on porous surfaces of varying porosity
- Improved electrical properties of SiC wafer with defects covered by free standing graphene
- Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer
- Epitaxial growth of SiC in a new multi-wafer VPE reactor