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  • Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode
  • SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor
  • Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy
  • Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density
  • Comparison of diamond wire cut and silicon carbide slurry processed silicon wafer surfaces after acidic texturisation
  • Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique
  • Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC
  • Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy
  • Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
  • Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices
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