- Nitrogen doped epitaxial graphene on 4H SiC(0001) Experimental and theoretical study
- Hole injection and dielectric breakdown in 6H SiC and 4H SiC metal oxide semiconductor structures during substrate electron injection via Fowler Nordheim tunneling
- The channeling effect of Al and N ion implantation in 4H SiC during JFET integrated device processing
- Deformation and removal characteristics in nanoscratching of 6H SiC with Berkovich indenter
- The use of potassium peroxidisulphate and Oxone as oxidizers for the chemical mechanical polishing of silicon wafers
- Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum
- Effect of residual H2O on epitaxial AlN film growth on 4H-SiC by alternating doses of TMA and NH3
- Oxidation behavior of amorphous boron carbide silicon carbide nano multilayer thin films
- Silicon carbide hollow cylinders using carbon nanotubes structures as template
- High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis