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  • Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy
  • Textural development of SiC and diamond wire sawed sc-silicon wafer
  • Atomic-scale characterization of SI(110)/6H-SiC(0001) heterostructure by HRTEM
  • Growth and surface analysis of SiO2 on 4H-SiC for MOS devices
  • On the nature and removal of saw marks on diamond wire sawn multicrystalline silicon wafers
  • Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach
  • Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam
  • Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide
  • Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n type 4H SiC
  • Study of deep level defects in doped and semi insulating n 6H SiC epilayers grown by sublimation method
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