- Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy
- Textural development of SiC and diamond wire sawed sc-silicon wafer
- Atomic-scale characterization of SI(110)/6H-SiC(0001) heterostructure by HRTEM
- Growth and surface analysis of SiO2 on 4H-SiC for MOS devices
- On the nature and removal of saw marks on diamond wire sawn multicrystalline silicon wafers
- Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach
- Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam
- Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide
- Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n type 4H SiC
- Study of deep level defects in doped and semi insulating n 6H SiC epilayers grown by sublimation method