XIAMEN POWERWAY ADVANCED MATERIAL
  • Home
  • About us
  • Products
  • Silicon Carbide List
  • Knowledge
  • News
  • Download
  • Contact us

products category
  • Silicon Carbide Substrate...
    • 6H Silicon Carbide
    • 4H Silicon Carbide
    • N Type Silicon Carbide
    • Semi-insulating Silicon Carbide
    • As Cut Wafer
    • Lapping Wafer
    • Polishing Wafer
    • Transparent SiC
    • Dummy Wafer
    • Reclaim Wafer
  • SiC Epitaxial Wafers
  • Wafer Reclaim Service
    • Wafer Planarization
    • Wafer Reclaim
 
Company Name: XIAMEN POWERWAY ADVANCED MATERIAL
Tel: +86-592-5601404
Fax: +86-592-5563272
E-Mail: sic@powerwaywafer.com

Address:
Home > News
  • Fabrication of short SiC fiber reinforced SiC matrix composites with high fiber volume fraction
  • Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter
  • A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide
  • Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films
  • Impact of silicon carbide semiconductor technology in Photovoltaic Energy System
  • Evolution and present status of silicon carbide slurry recovery in silicon wire sawing
  • Liquid polycarbosilane derived SiC coating on silicon (1 1 1) wafer for enhanced mechanical properties
  • Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene
  • Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals
  • Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current
Prev 9 10 11 12 13 14 15 16 17 18 Next

Home| News| Sitemaps|

Copyright © 2012 XIAMEN POWERWAY ADVANCED MATERIAL All rights reserved