Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: sic@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode
Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

A Mo/n-type 6H-SiC/Ni Schottky barrier diode (SBD) was fabricated by sputtering Mo metal on n-type 6H-SiC semiconductor. Before the formation of Mo/n-type 6H-SiC SBD, an ohmic contact was formed by thermal evaporation of Ni on n-type 6H-SiC and annealing at 950 °C for 10 min. It was seen that the structure had excellent rectification. The electrical parameters were extracted using its current–voltage (IV) and capacitance–voltage (CV) measurements carried out at room temperature. Very high (1.10 eV) barrier height and 1.635 ideality factor values were reported for Mo/n-type 6H-SiC using ln IV plot. The barrier height and series resistance values of the diode were also calculated as 1.413 eV and 69 Ω from Norde׳s functions, respectively. Furthermore, 1.938 eV barrier height value of Mo/n-type 6H-SiC SBD calculated from CVmeasurements was larger than the one obtained from IV data.

Keywords

  • Schottky barrier diode
  • 6H-SiC
  • Barrier height
  • Ideality factor
Source:Sciencedirect

 

 

If you need more information about  SIC 6H, please visit:http://www.semiconductorwafers.net or send us email at sic@powerwaywafer.com