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Home > News > Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas
Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas
The low-temperature chemical vapor deposition process of silicon carbide (SiC) on an aluminum surface was developed. In order to prepare the reactive substrate surface, a silicon interlayer containing silicon dimers at its surface was formed using trichlorosilane gas at 600 °C. Next, the SiC thin film was formed at room temperature using monomethylsilane gas. Silicon, carbon and silicon-carbon bond in the obtained film were detected by various evaluations. The SiC film was amorphous and about 5-nm thick.
Highlights
• The SiC film was formed on an Al surface using SiH3CH3 gas.
• The SiC film was amorphous and about 5-nm thick.
• A silicon interlayer, as active layer, was formed using SiHCl3 gas at 600 °C.
 
Source: Journal of Crystal Growth
 
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