Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas
The low-temperature chemical vapor deposition process of silicon carbide (SiC) on an aluminum surface was developed. In order to prepare the reactive substrate surface, a silicon interlayer containing silicon dimers at its surface was formed using trichlorosilane gas at 600 °C. Next, the SiC thin film was formed at room temperature using monomethylsilane gas. Silicon, carbon and silicon-carbon bond in the obtained film were detected by various evaluations. The SiC film was amorphous and about 5-nm thick.
Highlights
• The SiC film was formed on an Al surface using SiH3CH3 gas.
• The SiC film was amorphous and about 5-nm thick.
• A silicon interlayer, as active layer, was formed using SiHCl3 gas at 600 °C.
Source: Journal of Crystal Growth
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