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Home > News > Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique
Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique
Hydrogenated amorphous silicon carbide thin films with high photo-sensitivity were fabricated by using layer-by-layer hydrogen annealing technique in conventional plasma enhanced chemical vapor deposition system. It was found that the photo-conductivity is increased from 1.9 × 10−7 to 1.5 × 10−6 S/cm after layer-by-layer hydrogen annealing. The photo-sensitivity can reach as high as 106for sample with optical band gap of 2.11 eV. The influence of the hydrogen annealing time on film quality and optical properties were investigated. It was demonstrated that the layer-by-layer hydrogen annealing technique can improve the film quality, which can be attributed to both the hydrogen chemical annealing and hydrogen passivation effect.
Highlights
► a-SiC:H films were prepared by layer-by-layer hydrogen plasma annealing technique.
► The electrical and optical properties of prepared films were studied.
► Photo-conductivity was improved after hydrogen plasma annealing.
► High photo-sensitivity (106) was achieved for 10 s layer-by-layer annealed film.
 
Fig. 1. Raman spectra of a-SiC:H films with layer-by-layer hydrogen plasma annealing at 10 s and 20 s as well as un-treated one (tH = 0 s).
 
Source: Applied Surface Science
 
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