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Home > News > High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis

 In this article we report the fabrication and characterization of large area, room-temperature operable and very high resolution Schottky barrier detectors for alpha particles using 20 μm thick n-type 4H–SiC epitaxial layers. Schottky barriers were fabricated by depositing circular nickel contacts of ~11 mm2 area on the 4H–SiC epitaxial layers. Room temperature current–voltage measurements revealed very high Schottky barrier height of 1.6 eV and extremely low leakage current of 3.5 pA at an operating reverse bias of −90 V. We also report an energy resolution of 0.29%, which is the best resolution obtained so far for uncollimated 5.48 MeV alpha particles in 4H–SiC epitaxial detectors with such a large area. Very low micropipe density (<1 cm−2) and low effective doping concentration (2.4×1014 cm−3) in the epilayer helped to achieve a high resolution even with the large detector area and a broad source. A diffusion length of ~18.6 μm for holes has been determined in these detectors following a calculation based on a drift-diffusion model. A noise analysis in terms of equivalent noise charge revealed that the white series noise due to the detector capacitance has substantial effect on their spectroscopic performance.

Keywords

  • 4H–SiC epitaxial layer
  • Alpha-particle detection
  • Semiconductor radiation detector;
  • Semiconductor device noise

Source:Sciencedirect


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