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Home > News > High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma
High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma
Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl4 precursor, and appeared to be independent of substrate temperature over the range 680–1215 °C.
 
Fig. 1. SEM image of fracture cross-section of a SiC film. Deposition conditions: pressure, 150 Torr; substrate temperature, 730 °C; SiCl4 flow rate=67 sccm; C/Si input=2.5:1; deposition time=6 min.
 
Source: Materials Letters
 
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