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Home > News > Fracture properties of Silicon carbide thin films characterized by bulge test of long membranes
Fracture properties of Silicon carbide thin films characterized by bulge test of long membranes
The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus Eps, prestress s0, and fracture strength smax for 3C-SiC thin films with thickness of 0.40 mum and 1.42 mum were extracted. The Eps values of SiC are strongly dependent on grain orientation. The thicker SiC film presents lower s0 than the thinner film due to stress relaxation. The smax values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.
 
Source:IEEE
 
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