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Home > News > Formation of carbon nanowires by annealing silicon carbide films deposited by magnetron sputtering
Formation of carbon nanowires by annealing silicon carbide films deposited by magnetron sputtering
The silicon carbide films were grown on a Si(1 1 1) substrate by radio frequency (RF) magnetron sputtering at room temperature. Carbon nanowires were obtained after annealing at 1150 °C for 3 h in a H2 atmosphere. Fourier transform infrared transmission spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to analyze the structure, composition and surface morphology of the films. The results confirmed the formation of carbon nanowires.
 
Fig. 1. The SEM image of the sample after annealing at 1150 °C for 3 h in H2 ambient.
 
Source: Materials Letters
 
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