Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > Knowledge > 5.Silicon Carbide Technology > 5-2-1-2 Electrical Properties
5-2-1-2 Electrical Properties

5-2 Fundamental SiC Material Properties

5-2-1-2 Electrical Properties

Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in Table 5.1. Much more
detailed electrical properties can be found in References 11–13 and references therein. Even within a
given polytype, some important electrical properties are nonisotropic, in that they are strong functions
of crystallographic direction of current flow and applied electric field (for example, electron mobility
for 6H-SiC). Dopant impurities in SiC can incorporate into energetically inequivalent sites. While all
dopant ionization energies associated with various dopant incorporation sites should normally be
considered for utmost accuracy, Table 5.1 lists only the shallowest reported ionization energies of each