Highlights
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Effects of atomic step width on the removal of sapphire and SiC wafers are studied.
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The reason of effects of step width on the removal and the model are discussed.
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CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed.
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The variations of atomic step morphology towards defects are analyzed.
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The formation mechanism of the defects is discussed.
Absrtact
Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over the surface via AFM. However, the variations of atomic step widths and step directions are different on the whole of different wafer surfaces: that on sapphire wafer are uniform, while that on SiC wafer are distinct. The effects of atomic step width on removal rate are studied. Removal model of super-hard wafer to realize atomically ultra-smooth surface is proposed. The variations of atomic step morphology toward different defects on sapphire and SiC wafers surface are analyzed, and the formation mechanism is discussed.
Keywords
- Chemical mechanical polishing (CMP);
- Sapphire;
- Silicon carbide (SiC);
- Atomic step;SiC epitaxy
Source:Sciencedirect
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