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Home > News > Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

 A new type of 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation has been developed. Multiple resistance heaters ensure uniform radial temperature distribution throughout a 150-mm-diameter wafer. Enhancement of the growth rates is realized by high-speed wafer rotation under a relatively high system pressure, and growth rates of 40–50 µm/h are achieved on 4° off 4H-SiC substrates, maintaining a low defect density and a smooth surface without macrostep bunching. Excellent thickness and doping uniformities are simultaneously obtained for a 150-mm-diameter wafer at a high growth rate of 50 µm/h.

 

 

Source: iopscience

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