In order to analyze the deformation characteristics and removal mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching test was conducted on 6HSiC (0001) by using a Berkovich diamond indenter. The deformation and removal characteristics of 6H-SiC during a nanoscratching process by using a sharp indenter are significantly different from those through a single-point diamond turning (SPDT) method. The characteristics in different regimes of the scratching process like plastic flow and the form of fracture behavior were analyzed. The ductile/brittle transition (DBT) of this material was discussed in detail theoretically and experimentally. X-ray diffraction and a laser micro-Raman spectrometer were used for phase analysis after the scratching process. The results indicate that phase transformation has not occurred during the nanoscratching process of this material.

Keywords

• 6H-SiC; 
• Nanoscratching; 
• HPPT; 
• DBT; 
• Deformation.

Source:Sciencedirect

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