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Home > News > Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy
Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy

 

The comet-shaped defect consists of four 3C-SiC domains in the tail part that maintain characteristic twin orientation relationships, which are considered to be stable due to the minimized distortion and stable facet formation, and are gradually merged along the direction of step-flow growth to form the needlelike morphology.

Foreign material is considered to trigger the anomalous crystal growth that formed the defect.

The head part of the defect was not a contaminant grain, but was formed by some anomalous growth.

 


 

The crystallographic structures of comet-shaped defects observed on the C-face 4H-SiC epitaxial film were investigated using electron microscopy. The comet-shaped defects consist of head and tail parts. The tail part is symmetric with respect to the View the MathML source plane in the cross-sectional image and narrows along the View the MathML source direction, i.e., along the step-flow direction of epitaxial film growth on the C-face. The tail part consists of four 3C domains with characteristic twin boundaries of Σ3 and Σ27. The head part is formed by 3C and defective hexagonal-SiC polycrystalline grains during epitaxial film growth.

Keywords

  • A1. Crystal structure
  • A1. Defects
  • A3. Chemical vapor deposition processes

Source:Sciencedirect

 

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