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Home > News > Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films
Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films

 

Highlights

 

Two types of the triangular defects on the 4H-SiC epitaxial films were investigated.

The one is with a single valley and the other one is with washboard-like morphology.

The morphology like a single valley is formed by the 3C domains.

The washboard-like morphology is formed by the 4H domains which cover the 3C layer.

 


Abstract

Triangular defects with a characteristic morphology consisting of a 3C-type structure were investigated on Si-face 4H-SiC epitaxial films using electron microscopy. Two types of triangular defects were investigated: one with a single valley on the surface along the View the MathML source direction and another with several parallel ridges and valleys called “washboard-like defects”. The defects with a single valley had a characteristic domain structure consisting of four 3C crystals, which is similar to that of previously reported comet-shaped defects on the C-face. It is shown that the 3C domain in the washboard-like defect is covered by 4H layers with a washboard-like morphology.

Keywords

  • A1. Crystal structure
  • A1. Defects
  • A3. Chemical vapor deposition processes

Source:Sciencedirect 

 

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