Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: sic@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China
Home > News > Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode
Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode

Two models have been used in order to explain the anomalies observed in a Ni/SiC-6H Schottky n-type diode I(V) characteristic. Both, parallel conduction and potential fluctuation models showed that the barrier's height is around a mean value of 1.86 V, corresponding to a factor of ideality of n  =1. Another conclusion was that View the MathML source V.

It has been, also, explained why the Arrhénius or Richardson plot (ln(Is/T2) versus 1/T) is not linear and why the area of the low barrier height Al, representing a defective zone, is approximately about 0.12% of the total area contact.

Keywords

  • Schottky diode
  • Barrier height
  • Inhomogeneities
  • Ni/SiC-6H material

Source:Sciencedirect

 

If you need more information about silicon carbide, please visit:www.siliconcarbidewafer.com or send us email at sic@powerwaywafer.com