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Home > News > Atomic-scale characterization of SI(110)/6H-SiC(0001) heterostructure by HRTEM
Atomic-scale characterization of SI(110)/6H-SiC(0001) heterostructure by HRTEM




Si/SiC heterojunction was employed to realize non-UV light operation of SiC devices.

Si films of preferred orientation have been prepared on 6 H-SiC (0001) successfully.

HRTEM results indicate that Si film has epitaxial connection with the 6 H-SiC substrate.

The atomic-structure of Si(110)/SiC(0001) interface is defined by HRTEM.

The misfit dislocation density at Si(110)/SiC(0001) interface is calculated.



The atomic structure of Si(110)/SiC(0001) heterojunctions prepared on 6 H-SiC(0001) were characterized by transmission electron microscopy and X-ray diffraction. An FCC-on-HCP parallel epitaxy is achieved for the Si(110)/SiC(0001) heterostructure with a growth temperature of 1050 °C and the in-plane orientation relationship is Si[1–10]//6 H-SiC[11–20]. The pure edge misfit dislocations with a Burgers vector of View the MathML source<11–20>SiC parallel to the interface are observed to accommodate the extreme lattice mismatch. Along the in-plane orientation Si[1–10]SiC[11–20], the Si/6 H-SiC interface has a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%. The misfit dislocation density at the Si/SiC interface is calculated as 1.217×1014 cm−2.


  • Si/6H-SiC heterostructure
  • Epitaxial growth
  • Crystal structure
  • Transmission electron microscopy



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