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Home > News > Amorphous silicon carbide films prepared by H2 diluted silane methane plasma
Amorphous silicon carbide films prepared by H2 diluted silane methane plasma
This paper reports on the preparation and characterization of hydrogenated amorphous silicon carbide films prepared by H2 diluted silane–methane plasma. Carbon-rich a-SiC:H film with band gap of up to 3.3 eV has been achieved. IR and UV–Vis spectra were employed to characterize the chemical bonding and optical properties of as-prepared films. It is shown that hydrogen dilution is crucial in obtaining these wide band gap carbon-rich films. Raman and PL measurements were performed to probe the microstructure and photoelectronic properties of these films before and after annealing. Films with intermediate carbon concentration seem more defective and exhibit stronger photoluminescence and subband absorption than others. Films with different compositions exhibit different annealing behaviors. For silicon rich and carbon rich films, high temperature annealing results in the formation of silicon crystallites and graphite clusters, respectively.
 
Fig. 1. Transmittance spectrum of sample (d) with a band gap of 3.3 eV.
 
Source: Journal of Crystal Growth
 
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