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Home > News > Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter
Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter

In order to analyze the deformation characteristics and removal mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching test was conducted on 6Hsingle bondSiC (0001) by using a Berkovich diamond indenter. The deformation and removal characteristics of 6H-SiC during a nanoscratching process by using a sharp indenter are significantly different from those through a single-point diamond turning (SPDT) method. The characteristics in different regimes of the scratching process like plastic flow and the form of fracture behavior were analyzed. The ductile/brittle transition (DBT) of this material was discussed in detail theoretically and experimentally. X-ray diffraction and a laser micro-Raman spectrometer were used for phase analysis after the scratching process. The results indicate that phase transformation has not occurred during the nanoscratching process of this material.

Keywords

  • 6H-SiC
  • Nanoscratching
  • HPPT
  • DBT
  • Deformation.
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Source:Sciencedirect 

 

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